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BDW42/D PDF预览

BDW42/D

更新时间: 2024-09-28 23:35:11
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8页 77K
描述
Darlington Complementary Silicon Power Transistors

BDW42/D 数据手册

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ON Semiconductort  
NPN  
BDW42  
PNP  
*
*
Darlington Complementary  
Silicon Power Transistors  
BDW46  
. . . designed for general purpose and low speed switching  
applications.  
BDW47  
High DC Current Gain – h = 2500 (typ.) @ I = 5.0 Adc.  
FE  
C
Collector Emitter Sustaining Voltage @ 30 mAdc:  
= 80 Vdc (min.) — BDW46  
*ON Semiconductor Preferred Device  
V
CEO(sus)  
100 Vdc (min.) — BDW42/BDW47  
DARLINGTON  
15 AMPERE  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
80–100 VOLTS  
85 WATTS  
Low Collector Emitter Saturation Voltage  
V
CE(sat)  
= 2.0 Vdc (max.) @ I = 5.0 Adc  
C
3.0 Vdc (max.) @ I = 10.0 Adc  
C
Monolithic Construction with Built–In Base Emitter Shunt resistors  
TO–220AB Compact Package  
MAXIMUM RATINGS  
BDW42  
BDW47  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
Base Current  
Symbol  
BDW46  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
V
CEO  
100  
V
CB  
80  
100  
V
EB  
5.0  
15  
I
C
I
B
0.5  
Total Device Dissipation  
P
D
@ T = 25_C  
85  
0.68  
Watts  
W/_C  
_C  
CASE 221A–09  
TO–220AB  
C
Derate above 25_C  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
1.47  
_C/W  
θ
JC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
25  
50  
75  
100  
125  
150  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Temperature Derating Curve  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 9  
BDW42/D  

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