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BDW42BD

更新时间： 2024-11-14 19:17:51
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
7页 142K
描述
15A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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中文翻译

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BDW42BD 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.81
外壳连接：COLLECTOR最大集电极电流 (IC)：15 A
集电极-发射极最大电压：100 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：250JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：4 MHz
Base Number Matches：1

BDW42BD 数据手册

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BDW42G - NPN, BDW46G,  
BDW47G - PNP  
Darlington Complementary  
Silicon Power Transistors  
This series of plastic, medium−power silicon NPN and PNP  
Darlington transistors are designed for general purpose and low speed  
switching applications.  
http://onsemi.com  
Features  
15 AMP DARLINGTON  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
80−100 VOLT, 85 WATT  
• High DC Current Gain − h = 2500 (typ) @ I = 5.0 Adc.  
• Collector Emitter Sustaining Voltage @ 30 mAdc:  
FE  
C
V
= 80 Vdc (min) − BDW46  
100 Vdc (min) − BDW42/BDW47  
CEO(sus)  
• Low Collector Emitter Saturation Voltage  
V
= 2.0 Vdc (max) @ I = 5.0 Adc  
C
MARKING  
DIAGRAM  
CE(sat)  
3.0 Vdc (max) @ I = 10.0 Adc  
C
• Monolithic Construction with Built−In Base Emitter Shunt resistors  
• TO−220AB Compact Package  
• These are Pb−Free Packages*  
4
TO−220AB  
BDWxx  
CASE 221A−09  
AYWWG  
STYLE 1  
MAXIMUM RATINGS  
1
Rating  
Symbol  
Value  
Unit  
2
3
Collector-Emitter Voltage  
V
CEO  
Vdc  
BDW46  
BDW42, BDW47  
Collector-Base Voltage  
80  
100  
BDWxx = Device Code  
x = 42, 46, or 47  
V
Vdc  
CB  
A
=
=
=
=
Assembly Location  
Year  
BDW46  
BDW42, BDW47  
80  
100  
Y
WW  
G
Work Week  
Pb−Free Package  
Emitter-Base Voltage  
Collector Current  
Base Current  
V
5.0  
15  
Vdc  
Adc  
Adc  
EB  
I
C
I
0.5  
B
ORDERING INFORMATION  
Total Device Dissipation  
P
D
@ T = 25°C  
Derate above 25°C  
85  
0.68  
W
W/°C  
C
Device  
Package  
Shipping  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
BDW42G  
TO−220AB  
(Pb−Free)  
50 Units/Rail  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
BDW46G  
BDW47G  
TO−220AB  
(Pb−Free)  
50 Units/Rail  
50 Units/Rail  
Symbol  
Max  
Unit  
TO−220AB  
(Pb−Free)  
Thermal Resistance,  
Junction−to−Case  
R
1.47  
°C/W  
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2011  
Publication Order Number:  
October, 2011 − Rev. 15  
BDW42/D  
1234567

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BDW42BU ONSEMI

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 		Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BDW42D1 MOTOROLA

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 		Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BDW42DW ONSEMI

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BDW42G ONSEMI

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BDW42L MOTOROLA

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BDW42N MOTOROLA

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 		Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas

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