Datasheet > BDT92F

BDT92F

更新时间： 2024-09-24 08:51:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	113K
描述
isc Silicon PNP Power Transistor

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BDT92F 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BDT92F/94F/96F

DESCRIPTION

·DC Current Gain- h_FE= 20~200@ I_C= -4A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -60V(Min)- BDT92F; -80V(Min)- BDT94F;

-100V(Min)- BDT96F

·Complement to Type BDT91F/93F/95F

APPLICATIONS

·Designed for use in audio output stages and general

amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

-60

UNIT

BDT92F

BDT94F

BDT96F

BDT92F

BDT94F

BDT96F

V_CBO

Collector-Base Voltage

-80

-100

-60

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

-80

-100

-7

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

-10

-20

Base Current-Continuous

-4

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

6.4

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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