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BDT94F PDF预览

BDT94F

更新时间: 2024-11-20 08:51:59
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 113K
描述
isc Silicon PNP Power Transistor

BDT94F 数据手册

 浏览型号BDT94F的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistor  
BDT92F/94F/96F  
DESCRIPTION  
·DC Current Gain- hFE= 20~200@ IC= -4A  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = -60V(Min)- BDT92F; -80V(Min)- BDT94F;  
-100V(Min)- BDT96F  
·Complement to Type BDT91F/93F/95F  
APPLICATIONS  
·Designed for use in audio output stages and general  
amplifier and switching applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
-60  
UNIT  
BDT92F  
BDT94F  
BDT96F  
BDT92F  
BDT94F  
BDT96F  
VCBO  
Collector-Base Voltage  
V
-80  
-100  
-60  
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
-80  
-100  
-7  
VEBO  
IC  
ICM  
IB  
V
A
Collector Current-Continuous  
Collector Current-Peak  
-10  
-20  
A
Base Current-Continuous  
-4  
A
Collector Power Dissipation  
@ TC=25℃  
PC  
TJ  
32  
W
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
6.4  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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