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BD840CS_L2_00001 PDF预览

BD840CS_L2_00001

更新时间: 2024-11-05 01:11:03
品牌 Logo 应用领域
强茂 - PANJIT 功效瞄准线二极管
页数 文件大小 规格书
5页 260K
描述
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

BD840CS_L2_00001 技术参数

生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.66Is Samacsys:N
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.7 VJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2最大非重复峰值正向电流:85 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:4 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:40 V
最大反向电流:50 µA表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLEBase Number Matches:1

BD840CS_L2_00001 数据手册

 浏览型号BD840CS_L2_00001的Datasheet PDF文件第2页浏览型号BD840CS_L2_00001的Datasheet PDF文件第3页浏览型号BD840CS_L2_00001的Datasheet PDF文件第4页浏览型号BD840CS_L2_00001的Datasheet PDF文件第5页 
PBD840CS~BD8200CS  
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS  
40~200 V  
8 A  
Voltage  
Current  
Features  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O.  
For surface mounted applications in order to optimize board space  
Low power loss, High efficiency  
High surge capacity  
Lead free in compliance with EU RoHS 2011/65/EU directive.  
Green molding compound as per IEC61249 Std..(Halogen Free)  
Mechanical Data  
Case: TO-252 Molded plastic  
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026  
Polarity: As marking  
Standard packaging: 16mm tape (EIA-481)  
Approx. Weight: 0.0104 ounces, 0.297 grams  
Marking: Part number  
Maximum Ratings (TA=25oC unless otherwise noted)  
PARAMETER  
SYMBOL  
BD840CS  
BD845CS  
BD850CS  
BD860CS  
BD880CS  
BD890CS  
BD8100CS  
BD8150CS  
BD8200CS  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum rms voltage  
VRRM  
VRMS  
VR  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
8
90  
63  
90  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
A
V
Maximum dc blocking voltage  
100  
Maximum average forward rectified current  
IF(AV)  
IFSM  
VF  
Peak forward surge current : 8.3ms single half  
sine-wave superimposed on rated load  
85  
Maximum forward voltage at 4A per diode  
Maximum dc reverse current at TJ=25 oC  
0.7  
0.75  
0.8  
0.9  
0.05  
20  
5
IR  
mA  
oC/W  
oC  
rated dc blocking voltage  
Typical thermal resistance  
TJ=100 oC  
RJC  
Operating junction and storage temperature  
range  
TJ,TSTG  
-55 to +150  
-65 to +175  
Note: Both Bonding and Chip structure are available.  
November 13,2014-REV.02  
Page 1  

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