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BD840S PDF预览

BD840S

更新时间: 2024-11-04 08:51:47
品牌 Logo 应用领域
强茂 - PANJIT 肖特基二极管
页数 文件大小 规格书
3页 119K
描述
DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

BD840S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252
包装说明:ROHS COMPLIANT, PLASTIC, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.66
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:85 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:40 V表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BD840S 数据手册

 浏览型号BD840S的Datasheet PDF文件第2页浏览型号BD840S的Datasheet PDF文件第3页 
BD840S~BD8200S  
DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS  
CURRENT  
8 Ampere  
VOLTAGE  
40 to 200 Volts  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O  
• For surface mounted applications  
• Low profile package  
• Built-in strain relief  
• Low power loss, High efficiency  
• High surge capacity  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: TO-252 molded plastic  
Terminals: Solder plated, solderable per MIL-STD-750,Method 2026  
• Polarity: As marking  
• Standard packaging: 16mm tape (EIA-481)  
• Weight: 0.0104 ounces, 0.297grams.  
MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.  
BD840S  
BD845S  
BD850S  
BD860S  
BD880S  
BD890S  
BD8100S  
BD8150S  
BD8200S  
PARAMETER  
SYMBOL  
VRRM  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
40  
45  
50  
60  
80  
90  
100  
150  
200  
Maximum RMS Voltage  
VRMS  
28  
40  
31.5  
45  
35  
50  
42  
60  
56  
80  
8
63  
90  
70  
105  
150  
140  
200  
V
V
Maximum DC Blocking Voltage  
VDC  
100  
Maximum Average Forward Current (See Figure 1)  
IF(AV)  
A
Peak Forward Surge Current :8.3ms single half sine-wave  
superimposed on rated load(JEDEC method)  
IFSM  
85  
A
Maximum Forward Voltage at 8.0A  
VF  
0.70  
0.75  
0.80  
0.90  
V
Maximum DC Reverse Current T  
J
=25OC  
0.05  
20  
IR  
mA  
OC / W  
OC  
at Rated DC Blocking Voltage T  
J
=100OC  
Typical Thermal Resistance  
RθJC  
5
Operating Junction and Storage Temperature  
Range  
-55 to +150  
TJ ,TS T G  
-65 to +175  
PAGE . 1  
STAD-APR.30.2009  

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Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plasti