Datasheet > BD791

BD791

更新时间： 2024-01-15 19:16:38

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	109K
描述
POWER TRANSISTOR SILICON

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技术参数
数据手册

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BD791 技术参数

生命周期：	Transferred	零件包装代码：	TO-225AA
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.31	最大集电极电流 (IC)：	4 A
集电极-发射极最大电压：	100 V	配置：	SINGLE
最小直流电流增益 (hFE)：	5	JEDEC-95代码：	TO-225AA
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	40 MHz
Base Number Matches：	1

BD791 数据手册

1.0

0.7

0.5

D = 0.5

0.2

0.3

0.2

0.1

0.05

(pk)

0.1

0.07

0.05

= r(t) R

JC(t)

= 8.34

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

0.02

0.01

0.03

0.02

(pk)

0 (SINGLE PULSE)

– T = P

J(pk)

JC(t)

100

DUTY CYCLE, D = t /t

1 2

0.01

0.02

0.05

0.1

0.2

0.5

1.0

2.0

t, TIME (ms)

5.0

200

Figure 4. Thermal Response

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

100

500

µs

5.0

1.0 ms

µs

2.0

down. Safe operating area curves indicate I – V

limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

1.0

0.5

= 150°C

5.0 ms

BONDING WIRE LIMITED

THERMALLY LIMITED @ T = 25°C

(SINGLE PULSE)

The data of Figure 5 is based on T

= 150 C: T is

J(pk)

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided T

0.1

0.05

J(pk)

may be calculated from the data in Fig-

SECOND BREAKDOWN LIMITED

150 C, T

J(pk)

CURVES APPLY BELOW RATED V

CEO

ure 4. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.

0.02

0.01

1.0

2.0 3.0

5.0 7.0 10

50 70 100

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

2000

1000

200

= 25°C

= 30 V

/I = 10

100

700

500

C B

B1 B2

= I

300

200

100

1.0

2.0

3.0

5.0 7.0

10 20

50 70 100

0.04 0.06

0.1

0.2

0.4

0.6

1.0

2.0

4.0

, REVERSE VOLTAGE (VOLTS)

, COLLECTOR CURRENT (AMP)

Figure 7. Capacitance

Figure 6. Turn–Off Time

Motorola Bipolar Power Transistor Device Data

1 234 5 6

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