是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.75 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 12 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 45 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BD539C-S | BOURNS |
类似代替 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD539C-S | BOURNS |
获取价格 |
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
BD539D | BOURNS |
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NPN SILICON POWER TRANSISTORS | |
BD539D | POINN |
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NPN SILICON POWER TRANSISTORS | |
BD539D | ISC |
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Silicon NPN Power Transistor | |
BD539D-S | BOURNS |
获取价格 |
Power Bipolar Transistor, 5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
BD539-S | BOURNS |
获取价格 |
Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
BD53E23 | ROHM |
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Free Delay Time Setting CMOS Voltage Detector IC Series | |
BD53E23G | ROHM |
获取价格 |
Free Delay Time Setting CMOS Voltage Detector IC Series | |
BD53E23G-M | ROHM |
获取价格 |
罗姆的延迟时间自由设置型CMOS复位IC系列,是内置了采用CMOS工艺的高精度、低消耗电流 | |
BD53E23G-MTR | ROHM |
获取价格 |
Free Delay Time Setting CMOS Voltage Detector IC Series |