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BD539D

更新时间: 2024-11-01 23:16:23
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描述
NPN SILICON POWER TRANSISTORS

BD539D 数据手册

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BD539, BD539A, BD539B, BD539C, BD539D  
NPN SILICON POWER TRANSISTORS  
Copyright © 1997, Power Innovations Limited, UK  
JUNE 1973 - REVISED MARCH 1997  
Designed for Complementary Use with the  
BD540 Series  
TO-220 PACKAGE  
(TOP VIEW)  
45 W at 25°C Case Temperature  
5 A Continuous Collector Current  
1
2
3
B
C
E
Up to 120 V V  
rating  
CEO  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BD539  
40  
BD539A  
BD539B  
BD539C  
BD539D  
BD539  
60  
Collector-base voltage  
VCBO  
80  
V
100  
120  
40  
BD539A  
BD539B  
BD539C  
BD539D  
60  
Collector-emitter voltage (see Note 1)  
VCEO  
80  
V
100  
120  
Emitter-base voltage  
VEBO  
IC  
5
V
Continuous collector current  
5
45  
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Operating free air temperature range  
Ptot  
Ptot  
TA  
W
W
°C  
°C  
°C  
°C  
2
-65 to +150  
-65 to +150  
-65 to +150  
260  
Operating junction temperature range  
Tj  
Storage temperature range  
Tstg  
TL  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. These values apply when the base-emitter diode is open circuited.  
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1

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