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BD37525STU PDF预览

BD37525STU

更新时间: 2024-11-07 03:05:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 132K
描述
Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

BD37525STU 数据手册

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BD375/377/379  
Medium Power Linear and Switching  
Applications  
Complement to BD376, BD378 and BD380 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
: BD375  
: BD377  
: BD379  
50  
75  
100  
V
V
V
CBO  
Collector-Emitter Voltage : BD375  
45  
60  
80  
V
V
V
CEO  
EBO  
: BD377  
: BD379  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current  
5
V
A
I
2
C
I
I
3
A
CP  
B
1
25  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
Junction Temperature  
Storage Temperature  
150  
J
T
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
(sus)  
* Collector-Emitter Sustaining Voltage  
CEO  
: BD375  
: BD377  
: BD379  
I
I
= 100mA, I = 0  
45  
60  
80  
V
V
V
C
C
B
BV  
Collector-Base  
: BD375  
: BD377  
: BD379  
= 100µA, I = 0  
50  
75  
100  
V
V
V
CBO  
E
Breakdown Voltage  
I
I
Collector Cut-off Current  
: BD375  
: BD377  
: BD379  
V
V
V
= 45V, I = 0  
2
2
2
µA  
µA  
µA  
CBO  
CB  
CB  
CB  
E
= 60V, I = 0  
E
= 80V, I = 0  
E
Emitter Cut-off Current  
* DC Current Gain  
V
= 5V, I = 0  
100  
375  
µA  
EBO  
EB  
C
h
h
V
V
= 2V, I = 0.15A  
40  
20  
FE1  
FE2  
CE  
CE  
C
= 2V, I = 1A  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter ON Voltage  
Turn ON Time  
I
= 1A, I = 0.1A  
1
V
V
CE  
C
B
(on)  
V
V
I
= 2V, I = 1A  
1.5  
BE  
CE  
C
t
t
= 30V, I = 0.5A  
50  
ns  
ns  
ON  
OFF  
CC  
C
= - I = 0.05A  
Turn OFF Time  
B1  
B2  
500  
R = 60Ω  
L
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed  
h
Classification  
FE  
Classification  
6
10  
63 ~ 160  
16  
100 ~ 250  
25  
h
40 ~ 100  
150 ~ 375  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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