Datasheet > BD375-6

BD375-6

更新时间： 2024-11-02 20:10:07

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页数	文件大小	规格书
2页	112K
描述
Transistor

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中文翻译

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技术参数
数据手册

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BD375-6 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Is Samacsys：	N	Base Number Matches：	1

BD375-6 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

BD375/377/379

DESCRIPTION

·DC Current Gain-

: h_FE= 20(Min)@ I_C= 1A

·Complement to Type BD376/378/380

APPLICATIONS

·Designed for medium power linear and switching

applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD375

BD377

BD379

BD375

BD377

BD379

V_CBO

Collector-Base Voltage

100

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

℃

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

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与BD375-6相关器件

型号	品牌	获取价格	描述	数据表
BD3756STU	FAIRCHILD	获取价格	Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
BD376	FAIRCHILD	获取价格	Medium Power Linear and Switching Applications
BD376	SAMSUNG	获取价格	Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
BD376	ISC	获取价格	isc Silicon PNP Power Transistors
BD376	NJSEMI	获取价格	Trans GP BJT PNP 45V 2A
BD37610	FAIRCHILD	获取价格	Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
BD376-10	ISC	获取价格	Transistor
BD376-10	SAMSUNG	获取价格	Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
BD376-10	NSC	获取价格	TRANSISTOR,BJT,PNP,45V V(BR)CEO,2A I(C),TO-126
BD37610STU	FAIRCHILD	获取价格	Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/