Datasheet > BD376

BD376

更新时间： 2024-11-06 06:41:51

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无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	117K
描述
isc Silicon PNP Power Transistors

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BD376 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

BD376/378/380

DESCRIPTION

·DC Current Gain-

: h_FE= 20(Min)@ I_C= -1A

·Complement to Type BD375/377/379

APPLICATIONS

·Designed for medium power linear and switching

applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

-50

UNIT

BD376

BD378

BD380

BD376

BD378

BD380

V_CBO

Collector-Base Voltage

-75

-100

-45

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

-60

-80

V_EBO

I_C

I_CM

I_B

-5

Collector Current-Continuous

Collector Current-Peak

-2

-3

Base Current-Continuous

-1

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

℃

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

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与BD376相关器件

型号	品牌	获取价格	描述	数据表
BD37610	FAIRCHILD	获取价格	Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
BD376-10	ISC	获取价格	Transistor
BD376-10	SAMSUNG	获取价格	Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
BD376-10	NSC	获取价格	TRANSISTOR,BJT,PNP,45V V(BR)CEO,2A I(C),TO-126
BD37610STU	FAIRCHILD	获取价格	Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
BD37616	FAIRCHILD	获取价格	Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
BD376-16	FAIRCHILD	获取价格	2 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-126
BD376-16	SAMSUNG	获取价格	Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
BD376-16	ISC	获取价格	Transistor
BD376-16	NSC	获取价格	TRANSISTOR,BJT,PNP,45V V(BR)CEO,2A I(C),TO-126