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BD242CBU PDF预览

BD242CBU

更新时间： 2024-11-16 13:05:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
6页 94K
描述
3A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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中文翻译

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BD242CBU 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.72
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：3 A集电极-发射极最大电压：100 V
配置：SINGLE最小直流电流增益 (hFE)：10
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：3 MHzBase Number Matches：1

BD242CBU 数据手册

 浏览型号BD242CBU的Datasheet PDF文件第2页浏览型号BD242CBU的Datasheet PDF文件第3页浏览型号BD242CBU的Datasheet PDF文件第4页浏览型号BD242CBU的Datasheet PDF文件第5页浏览型号BD242CBU的Datasheet PDF文件第6页 
BD241C (NPN),  
BD242B (PNP),  
BD242C (PNP)  
BD241C and BD242C are Preferred Devices  
Complementary Silicon  
Plastic Power Transistors  
http://onsemi.com  
Designed for use in general purpose amplifier and switching  
applications.  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
Features  
•ꢀCollector-Emitter Saturation Voltage -  
CE  
V
= 1.2 Vdc (Max) @ I = 3.0 Adc  
C
3 AMP  
•ꢀCollector-Emitter Sustaining Voltage -  
= 100 Vdc (Min) BD241C, BD242C  
80-100 VOLTS  
40 WATTS  
V
CEO(sus)  
•ꢀHigh Current Gain - Bandwidth Product  
f = 3.0 MHz (Min) @ I = 500 mAdc  
T
C
•ꢀCompact TO-220 AB Package  
MARKING  
DIAGRAM  
•ꢀEpoxy Meets UL94 V-0 @ 0.125 in  
•ꢀESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
TO-220AB  
CASE 221A-09  
STYLE 1  
•ꢀPb-Free Packages are Available*  
AYWW  
BD24xxG  
MAXIMUM RATINGS  
BD241C  
BD242C  
1
Rating  
Symbol  
BD242B  
Unit  
2
3
Collector-Emitter Voltage  
V
CEO  
80  
100  
Vdc  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
90  
115  
Vdc  
Vdc  
Adc  
CES  
BD24xx = Device Code  
xx = 1C, 2B, or 2C  
= Assembly Location  
V
5.0  
EB  
A
Collector Current  
Continuous  
Peak  
I
C
Y
= Year  
3.0  
5.0  
WW  
G
= Work Week  
= Pb-Free Package  
Base Current  
I
1.0  
40  
Adc  
W
B
Total Device Dissipation @  
P
D
T
= 25°C  
ORDERING INFORMATION  
C
Derate above 25°C  
0.32  
W/°C  
°C  
Device  
Package  
Shipping  
Operating and Storage  
Junction Temperature Range  
T , T  
–ꢁ65 to +ꢁ150  
J
stg  
BD241C  
TO-220AB  
50 Units/Rail  
50 Units/Rail  
THERMAL CHARACTERISTICS  
Characteristic  
BD241CG  
TO-220AB  
(Pb-Free)  
Symbol  
Max  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
R
62.5  
BD242B  
TO-220AB  
50 Units/Rail  
50 Units/Rail  
q
JA  
JC  
R
q
3.125  
BD242BG  
TO-220AB  
(Pb-Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
BD242C  
TO-220AB  
50 Units/Rail  
50 Units/Rail  
BD242CG  
TO-220AB  
(Pb-Free)  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
November, 2007 - Rev. 7  
1
Publication Order Number:  
BD241C/D  
123456

中文翻译

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 		3A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BD242CG ONSEMI

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 		Complementary Silicon Plastic Power Transisto

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