Datasheet > BD242CBV

BD242CBV

更新时间： 2024-11-17 03:03:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
61页	363K
描述
3A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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BD242CBV 数据手册

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use in general purpose amplifier and switching applications.

•

Collector–Emitter Saturation Voltage —

= 1.2 Vdc (Max) @ I = 3.0 Adc

Collector–Emitter Sustaining Voltage —

•

= 80 Vdc (Min.) BD241B, BD242B

= 100 Vdc (Min.) BD241C, BD242C

CEO(sus)

*Motorola Preferred Device

•

High Current Gain — Bandwidth Product

3 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

= 3.0 MHz (Min) @ I = 500 mAdc

Compact TO–220 AB Package

MAXIMUM RATINGS

80, 100 VOLTS

40 WATTS

BD241B

BD242B

BD241C

BD242C

Rating

Collector–Emitter Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

CEO

100

115

CES

5.0

Collector Current — Continuous

Peak

3.0

5.0

Adc

Base Current

1.0

Adc

Total Device Dissipation @ T = 25 C

Derate above 25 C

0.32

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to +150

CASE 221A–06

TO–220AB

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

62.5

Unit

C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

θJA

3.125

θJC

100

120

140

160

T , CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

3–174

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...61

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BD242C-DR6274	RENESAS	获取价格	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD242C-DR6280	RENESAS	获取价格	5A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD242CDW	ONSEMI	获取价格	3A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BD242CG	ONSEMI	获取价格	Complementary Silicon Plastic Power Transisto
BD242CJ69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast