Datasheet > BD242C-S

BD242C-S

更新时间： 2024-01-03 17:17:44

品牌	Logo	应用领域
伯恩斯 - BOURNS		/
页数	文件大小	规格书
4页	161K
描述
Transistor

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中文翻译

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技术参数
数据手册
替代型号

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BD242C-S 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.54	最大集电极电流 (IC)：	3 A
配置：	Single	最小直流电流增益 (hFE)：	10
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	40 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

BD242C-S 数据手册

BD242, BD242A, BD242B, BD242C

PNP SILICON POWER TRANSISTORS

Designed for Complementary Use with the

BD241 Series

TO-220 PACKAGE

(TOP VIEW)

40 W at 25°C Case Temperature

3 A Continuous Collector Current

5 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

This series is obsolete and

not recommended for new designs.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD242

-55

BD242A

BD242B

BD242C

BD242

-70

Collector-emitter voltage (R_BE= 100 Ω)

V_CER

-90

-115

-45

BD242A

BD242B

BD242C

-60

Collector-emitter voltage (I_C= -30 mA)

V_CEO

-80

-100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

-5

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

-3

-5

-1

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

°C

½LI_C

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= -0.4 A, R_BE= 100 Ω,

V_BE(off)= 0, R_S= 0.1 Ω, V_CC= -20 V.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4

中文翻译

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BD242C-S 替代型号

型号	品牌	替代类型	描述	数据表
BD242CG	ONSEMI	功能相似	Complementary Silicon Plastic Power Transisto
TIP32CG	ONSEMI	功能相似	Complementary Silicon Plastic Power Transistors
TIP32CTU	FAIRCHILD	功能相似	PNP Epitaxial Silicon Transistor

与BD242C-S相关器件

型号	品牌	获取价格	描述	数据表
BD242CT	MOTOROLA	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD242CTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD242CU	MOTOROLA	获取价格	3A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD242CU2	MOTOROLA	获取价格	3A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD242CUA	MOTOROLA	获取价格	3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD242CW	MOTOROLA	获取价格	暂无描述
BD242CWD	MOTOROLA	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD242D	NJSEMI	获取价格	Trans GP BJT PNP 100V 3A 3-Pin(3+Tab) TO-220AB Rail
BD242-DR6259	RENESAS	获取价格	5A, 45V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD242-DR6260	RENESAS	获取价格	5A, 45V, PNP, Si, POWER TRANSISTOR, TO-220AB

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