BD243

更新时间： 2024-11-26 04:09:11

品牌	Logo	应用领域
伯恩斯 - BOURNS		晶体晶体管
页数	文件大小	规格书
5页	106K
描述
NPN SILICON POWER TRANSISTORS

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数据手册
替代型号

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BD243 数据手册

BD243, BD243A, BD243B, BD243C

NPN SILICON POWER TRANSISTORS

●

Designed for Complementary Use with the

BD244 Series

TO-220 PACKAGE

(TOP VIEW)

●

65 W at 25°C Case Temperature

6 A Continuous Collector Current

10 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD243

BD243A

BD243B

BD243C

BD243

Collector-emitter voltage (R_BE= 100 Ω)

V_CER

115

BD243A

BD243B

BD243C

Collector-emitter voltage (I_C= 30 mA)

V_CEO

100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

°C

½LI_C

62.5

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 0.4 A, R_BE= 100 Ω,

_BE(off)= 0, R_S= 0.1 Ω, V_CC= 20 V.

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4 5

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BD243 替代型号

型号	品牌	替代类型	描述	数据表
BD243-S	BOURNS	类似代替	Power Bipolar Transistor, 6A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD540-S	BOURNS	类似代替	Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti

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