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BD242CG

更新时间： 2024-01-12 16:05:50
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 155K
描述
Complementary Silicon Plastic Power Transistors 80−100 VOLTS

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中文翻译

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BD242CG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TO-220AB
包装说明：TO-220, 3 PIN针数：3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.66最大集电极电流 (IC)：3 A
集电极-发射极最大电压：45 V配置：SINGLE
最小直流电流增益 (hFE)：10JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT APPLICABLE极性/信道类型：PNP
最大功率耗散 (Abs)：40 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT APPLICABLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

BD242CG 数据手册

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BD241C (NPN),  
BD242B (PNP),  
BD242C (PNP)  
Complementary Silicon  
Plastic Power Transistors  
Designed for use in general purpose amplifier and switching  
applications.  
http://onsemi.com  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
Features  
• Collector−Emitter Saturation Voltage −  
V
= 1.2 Vdc (Max) @ I = 3.0 Adc  
C
CE  
3 AMP  
80−100 VOLTS  
40 WATTS  
• Collector−Emitter Sustaining Voltage −  
= 100 Vdc (Min) BD241C, BD242C  
• High Current Gain − Bandwidth Product  
V
CEO(sus)  
f = 3.0 MHz (Min) @ I = 500 mAdc  
T
C
• Compact TO−220 AB Package  
MARKING  
DIAGRAM  
• Epoxy Meets UL94 V−0 @ 0.125 in  
• ESD Ratings: Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
TO−220AB  
CASE 221A−09  
STYLE 1  
• Pb−Free Packages are Available*  
AYWW  
BD24xxG  
MAXIMUM RATINGS  
BD241C  
BD242C  
1
Rating  
Symbol  
BD242B  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
2
3
Collector−Emitter Voltage  
Collector−Emitter Voltage  
Emitter−Base Voltage  
V
CEO  
100  
V
CES  
90  
115  
BD24xx = Device Code  
xx = 1C, 2B, or 2C  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
V
EB  
5.0  
A
Y
WW  
G
Collector Current  
Continuous  
Peak  
I
C
3.0  
5.0  
Base Current  
I
1.0  
40  
Adc  
W
B
Total Device Dissipation @  
P
D
T
= 25°C  
ORDERING INFORMATION  
C
Derate above 25°C  
0.32  
W/°C  
°C  
Device  
Package  
Shipping  
Operating and Storage  
Junction Temperature Range  
T , T  
–65 to +150  
J
stg  
BD241C  
TO−220AB  
50 Units/Rail  
50 Units/Rail  
THERMAL CHARACTERISTICS  
Characteristic  
BD241CG  
TO−220AB  
(Pb−Free)  
Symbol  
Max  
Unit  
°C/W  
°C/W  
BD242B  
TO−220AB  
50 Units/Rail  
50 Units/Rail  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
62.5  
q
JA  
R
3.125  
BD242BG  
TO−220AB  
(Pb−Free)  
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
BD242C  
TO−220AB  
50 Units/Rail  
50 Units/Rail  
BD242CG  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 − Rev. 8  
BD241C/D  
123456

中文翻译

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BD242CG 替代型号

型号 品牌 替代类型 描述 数据表
BD242C ONSEMI

类似代替

 POWER TRANSISTORS COMPLEMENTARY SILICON
BD242C FAIRCHILD

类似代替

 Medium Power Linear and Switching Applications
TIP32C STMICROELECTRONICS

功能相似

 Power transistor

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 		Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD242CL MOTOROLA

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 		Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD242CN MOTOROLA

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 		Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD242CS MOTOROLA

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 		Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
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BD242CT MOTOROLA

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 		Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD242CTU FAIRCHILD

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 		Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
BD242CU MOTOROLA

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 		3A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD242CU2 MOTOROLA

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 		3A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD242CUA MOTOROLA

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 		3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB

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