Datasheet > BD1LB500EFJ-C_15

BD1LB500EFJ-C_15

更新时间： 2024-11-29 01:14:11

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
20页	950K
描述
In-Vehicle 1ch Low Side Switch

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BD1LB500EFJ-C_15 数据手册

Datasheet

1ch Low Side Switch IC

In-Vehicle 1ch Low Side Switch

BD1LB500 Series (BD1LB500EFJ-C BD1LB500FVM-C)

Features

Specifications

■ Built-in overcurrent limiting circuit

■ Built-in thermal shutdown circuit (TSD)

■ Built-in open load detection circuit (at output OFF)

■ Enables direct control from CMOS logic ICs, etc.

■ Low standby current

■ Built-in under voltage lock out circuit

■ Built-in diagnostic output (ST) terminal

■ Low ON resistance R_DS(ON)=350mΩ(Typ) (V_DD=IN=5V,

Ta=25°C, I_OUT=0.25A)

Operating voltage range

3.5V to 5.5V

350mΩ

1.50A

ON resistance (25°C, Typ.)

Overcurrent limitation (Typ.)

Active clamp energy (25°C)

25mJ

■ Built-in overvoltage protection(active clamp) for output

circuit

Package

HTSOP-J8

MSOP8

4.90mm x 6.00mm x 1.00mm

2.90mm x 4.00mm x 0.90mm

■ Monolithic power IC in which the control unit (CMOS)

and power MOS FET are incorporated into one chip

■ 1ch low side switch for driving mechanical relay coil

■ AEC-Q100 Qualified⁽¹⁾

(1) Grade1

Overview

BD1LB500 Series is an in-vehicle 1ch low side switch.

This switch builds in the overcurrent limiting circuit,

thermal shutdown circuit, open load detection circuit and

under voltage lock out circuit. It also provides the

diagnostic output circuit when an abnormality is

detected.

MSOP8

Application

HTSOP-J8

■ In-vehicle application (Air conditioners, body devices,

meters, etc.)

Basic Application Circuit (Recommendation)

VBAT

R_L

V_DD

N.C.

DRAIN

VDD

Under voltage

lock out

Open load

detection

Overvoltage

protection

Logic

(2)

Rext

0.1µF

Over current

Limit

SOURCE

(GN D)

SOURCE(GND)

(3)

10k

(2) When the open detection function is required, an external resistance must be added between DRAIN terminal and SOURCE terminal.

(3) It is necessary to detect unusual state(ST terminal is low) when VDD terminal is opened.

Product configuration: Silicon monolithic integrated circuit ○The product is not designed for radiation resistance.

www.rohm.co.jp

TSZ02201-0G3G0BD00040-1-2

2015.11.10 Rev.007

1/16

TSZ22111・14・001

12 3 4 5 6 7...20

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