Datasheet > BD201F

BD201F

更新时间： 2024-11-28 06:41:51

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	113K
描述
isc Silicon NPN Power Transistor

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数据手册

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BD201F 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD201F/203F

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 45V(Min)- BD201F

60V(Min)- BD203F

·Complement to Type BD202F/204F

APPLICATIONS

·Designed for use in hi-fi equipment delivering an output

of 15 to 15 W into a 4Ωor 8Ωload.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD201F

BD203F

BD201F

BD203F

V_CBO

Collector-Base Voltage

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

V_EBO

I_C

I_CM

I_B

Collector Current-Continuous

Collector Current-Peak

Base Current

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

6.3

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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