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BD201_12 PDF预览

BD201_12

更新时间: 2024-11-28 12:53:11
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
3页 151K
描述
SILCON EPITAXIAL-BASE POWER TRANSISTORS

BD201_12 数据手册

 浏览型号BD201_12的Datasheet PDF文件第2页浏览型号BD201_12的Datasheet PDF文件第3页 
NPN BD201 – BD203  
SILCON EPITAXIAL-BASE POWER TRANSISTORS  
The BD201 and BD203 are NPN transistors mounted in Jedec TO-220 plastic package.  
They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W  
into 4or 8load.  
PNP complements are BD202 and BD204  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
Ratings  
Value  
Unit  
BD201  
BD203  
BD201  
BD203  
45  
60  
60  
60  
5.0  
8
12  
Collector-Emitter Voltage  
V
V
VCBO  
VEBO  
IC  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
V
A
A
IC  
ICM  
ICSM  
IB  
PD  
TJ  
Collector Current (non-repetitive peak value,tp max.2 ms)  
Base Current  
25  
3
60  
A
A
W
°C  
°C  
Total Device Dissipation  
Junction Temperature  
@ TC = 25°  
150  
-65 to +200  
TStg  
Storage Temperature range  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJ-a  
Thermal Resistance, Junction to mounting base  
Thermal Resistance, Junction to ambient in free air  
70  
K/W  
K/W  
RthJ-mb  
2.08  
COMSET SEMICONDUCTORS  
1/3  

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