Datasheet > BD201

BD201

更新时间： 2024-10-01 06:41:51

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	101K
描述
isc Silicon NPN Power Transistor

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中文翻译

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数据手册

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BD201 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD201/203

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 45V(Min)- BD201

60V(Min)- BD203

·Complement to Type BD202/204

APPLICATIONS

·Designed for use in hi-fi equipment delivering an output

of 15 to 15 W into a 4Ωor 8Ωload.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD201

BD203

BD201

BD203

V_CBO

Collector-Base Voltage

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

V_EBO

I_C

Collector Current-Continuous

Collector Current-Peak t_p≤10ms

Collector Current-Peak t_p≤2ms

Base Current

I_CM

I_CSM

I_B

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Thermal Resistance, Junction to Case

2.08

R_{th j-c}

Thermal Resistance, Junction to Ambient

R_{th j-a}

isc Website：www.iscsemi.cn

中文翻译

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BD202F	ISC	获取价格	isc Silicon PNP Power Transistor
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BD203	CDIL	获取价格	Medium Power Switching and Amplifier Applications