BD165

更新时间： 2024-11-10 22:39:31

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管局域网
页数	文件大小	规格书
4页	113K
描述
Plastic Medium Power Silicon NPN Transistor

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BD165 数据手册

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SEMICONDUCTOR TECHNICAL DATA

1.5 AMPERE

POWER TRANSISTORS

NPN SILICON

. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi

complementary circuits.

•

DC Current Gain — h = 40 (Min) @ I = 0.15 Adc

FE C

BD 165, 169 are complementary with BD 166, 168, 170

45, 60, 80 VOLTS

20 WATTS

MAXIMUM RATINGS

Rating

Symbol

Type

Value

Unit

Collector–Emitter Voltage

BD 165

BD 169

CEO

CBO

EBO

Collector–Base Voltage

BD 165

BD 169

Vdc

Emitter–Base Voltage

Collector Current

Base Current

Vdc

Adc

1.5

0.5

Total Device Dissipation @ T = 25 C

Derate above 25 C

1.25

Watts

mW/ C

Total Device Dissipation @ T = 25 C

Derate above 25 C

160

Watt

mW/ C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

6.25

100

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

CASE 77–08

TO–225AA TYPE

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Type

Min

Max

Unit

Collector–Emitter Sustaining Voltage*

BD 165

BD 169

—

Vdc

CEO

(I = 0.1 Adc, I = 0)

Collector Cutoff Current

mAdc

CBO

= 45 Vdc, I = 0)

BD 165

BD 169

—

0.1

= 80 Vdc, I = 0)

Emitter Cutoff Current (V

DC current Gain

= 5.0 Vdc, I = 0)

EBO

—

1.0

(I = 0.15 A, V

(I = 0.5 A, V

C CE

= 2 V)

—

Collector–Emitter Saturation Voltage*

(I = 0.5 Adc, I = 0.05 Adc)

—

0.5

0.95

—

Vdc

MHz

CE(sat)*

Base–Emitter On Voltage*

(I = 0.5 Adc, V = 2.0 Vdc)

BE(on)*

—

Current Gain–Bandwidth Product

6.0

(I = 500 mAdc, V

= 2 Vdc,

f = 1.0 MHz)

* Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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