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BD16950EFV-C PDF预览

BD16950EFV-C

更新时间: 2024-11-12 11:08:15
品牌 Logo 应用领域
罗姆 - ROHM 栅极驱动驱动器
页数 文件大小 规格书
55页 4441K
描述
BD16950EFV是符合AEC-Q100的2ch半桥栅极驱动器。可通过从外部MCU执行16位串行外设接口(SPI)进行控制。可独立控制高边/低边Nch-MOSFET,可通过MCU以各种模式进行控制。而且,用于调整转换速率的可变驱动电流设定适用于EMI和高效率驱动。错误信号可通过MCU读取。还可通过MCU复位各种设定寄存器。

BD16950EFV-C 数据手册

 浏览型号BD16950EFV-C的Datasheet PDF文件第2页浏览型号BD16950EFV-C的Datasheet PDF文件第3页浏览型号BD16950EFV-C的Datasheet PDF文件第4页浏览型号BD16950EFV-C的Datasheet PDF文件第5页浏览型号BD16950EFV-C的Datasheet PDF文件第6页浏览型号BD16950EFV-C的Datasheet PDF文件第7页 
2ch Half-Bridge Gate Driver  
BD16950EFV-C  
General Description  
Key Specifications  
The BD16950EFV is an AEC-Q100 automotive qualified  
2-channel Half-Bridge Gate Driver, controlled by an  
Input Voltage VS:  
Input Voltage VCC:  
5.5V to 40V  
3.0V to 5.5V  
external MCU through  
a 16-bit Serial Peripheral  
Gate Drive Voltage  
for Half-Bridge:  
Interface (SPI). Independent control of low-side and  
high-side N-MOSFETS allows for several MCU  
controlled modes. A programmable drive current is  
available to adjust slew-rates, in order to meet EMI and  
power dissipation requirements. Diagnostics can be  
read and reset by an external MCU.  
11V(Typ)  
VS Quiescent Supply Current:  
VCC Quiescent Supply Current:  
Gate Driver Current  
0µA(Typ)  
2µA(Typ)  
1mA to 31mA  
with 1mA step  
Cross Current Protection Time  
SPI clock  
0.25μs to 92μs  
Features  
AEC-Q100 Qualified(Note1)  
7MHz (Max)  
2ch Half-Bridge Gate Drivers  
4 external MOSFETs are Controlled Independently  
Half-Bridge Control Modes are Selected by SPI  
Slew Rates are Controlled with Constant Source  
/Sink Current.  
Package  
HTSSOP-B24  
W (Typ) x D (Typ) x H (Max)  
7.8mm × 7.6mm × 1.00mm  
500 kHz Oscillation for Charge Pump.  
16bit SPI  
(Note1) Grade1  
Applications  
4WD Torque Distribution System, Power Window  
Lifter, Sun Roof Module, Wiper, Seat Belt  
Tensioner, Seat Positioning etc.  
Typical Application Circuit  
VBAT  
VS  
CP  
CVS  
VP  
CCP1  
VP  
DRAIN  
CCP2  
CPM  
CPP  
TGH2  
TGH1  
GH1  
SH1  
GH2  
Voltage  
Regulator  
VCC  
CVCC  
M
SI  
SH2  
GL1  
BD16950EFV  
TGL2  
TGL1  
SO  
SCLK  
CSB  
RSTB  
GL2  
SL  
μC  
SGND  
PGND  
PWM1  
PWM2  
Product structure: Silicon monolithic integrated circuit This product has no designed protection against radioactive rays.  
www.rohm.com  
TSZ02201-0GBG0BD00160-1-2  
© 2017 ROHM Co., Ltd. All rights reserved.  
1/52  
01.MAR.2017 Rev.001  
TSZ2211114001  

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