Datasheet > BD139

BD139

更新时间： 2025-07-28 22:48:19

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
4页	104K
描述
Plastic Medium Power Silicon NPN Transistor

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BD139 数据手册

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by BD135/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi

complementary circuits.

1.5 AMPERE

POWER TRANSISTORS

NPN SILICON

•

DC Current Gain — h = 40 (Min) @ I = 0.15 Adc

FE C

BD 135, 137, 139 are complementary with BD 136, 138, 140

45, 60, 80 VOLTS

10 WATTS

CASE 77–08

TO–225AA TYPE

MAXIMUM RATINGS

Rating

Symbol

Type

Value

Unit

Collector–Emitter Voltage

BD 135

BD 137

BD 139

Vdc

CEO

CBO

EBO

Collector–Base Voltage

BD 135

BD 137

BD 139

100

Vdc

Emitter–Base Voltage

Collector Current

Base Current

Vdc

Adc

1.5

0.5

Total Device Dissipation @ T = 25 C

Derate above 25 C

1.25

Watts

mW/ C

Total Device Dissipation @ T = 25 C

Derate above 25 C

12.5

100

Watt

mW/ C

Operating and Storage Junction

Temperature Range

T , T

J stg

–55 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

100

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

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与BD139相关器件

型号	品牌	获取价格	描述	数据表
BD139-10	NXP	获取价格	NPN power transistors
BD139-10	INFINEON	获取价格	NPN SILICON TRANSISTORS
BD139-10	STMICROELECTRONICS	获取价格	Complementary low voltage transistor
BD139-10	CENTRAL	获取价格	80V,1.5A,1.25W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/S
BD139-10	COMSET	获取价格	Transistor
BD139-10-BP	MCC	获取价格	元器件封装:TO-126;
BD139-10-T60-K	UTC	获取价格	Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti
BD139-16	NXP	获取价格	NPN power transistors
BD139-16	STMICROELECTRONICS	获取价格	Complementary low voltage transistor
BD139-16	CENTRAL	获取价格	Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plasti