Datasheet > BCX70K

BCX70K

更新时间： 2024-10-27 22:48:19

品牌	Logo	应用领域
德欧泰克 - DIOTEC		/
页数	文件大小	规格书
2页	125K
描述
Surface mount Si-Epitaxial PlanarTransistors

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中文翻译

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数据手册

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BCX70K 数据手册

BCX 70

NPN

General Purpose Transistors

Surface mount Si-Epitaxial PlanarTransistors

NPN

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

Power dissipation – Verlustleistung

250 mW

±0.1

Plastic case

SOT-23

1.1

2.9

0.4

Kunststoffgehäuse

(TO-236)

Type

Code

Weight approx. – Gewicht ca.

0.01 g

Plastic material has UL classification 94V-0

1.9

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Dimensions / Maße in mm

1 = B 2 = E 3 = C

Maximum ratings (T_A= 25ꢀC)

Grenzwerte (T_A= 25ꢀC)

BCX 70

Collector-Emitter-voltage

Collector-Base-voltage

Emitter-Base-voltage

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (DC)

B open

E open

C open

V_CE0

V_CB0

V_EB0

P_tot

45 V

5 V

250 mW ¹)

100 mA

I_C

Peak Collector current – Kollektor-Spitzenstrom I_CM

200 mA

Peak Base current – Basis-Spitzenstrom

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

I_BM

T_j

T_S

200 mA

150ꢀC

- 65…+ 150ꢀC

Characteristics (T_j= 25ꢀC)

Kennwerte (T_j= 25ꢀC)

Min.

Typ.

Max.

Collector-Base cutoff current – Kollektorreststrom

I_E= 0, V_CB= 45 V

I_CB0

–

20 nA

20 ꢀA

I_E= 0, V_CB= 45 V, T_j= 150ꢀC

Emitter-Base cutoff current – Emitterreststrom

I_C= 0, V_EB= 4 V

I_EB0

–

20 nA

Collector saturation volt. – Kollektor-Sättigungsspg. ²)

I_C= 10 mA, I_B= 0.25 mA

I_C= 50 mA, I_B= 1.25 mA

V_CEsat

50 mV

100 mV

–

350 mV

550 mV

¹) Mounted on P.C. board with 3 mm²copper pad at each terminal

Montage auf Leiterplatte mit 3 mm²Kupferbelag (Lötpad) an jedem Anschluß

²) Tested with pulses t_p= 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen t_p= 300 ꢀs, Schaltverhältnis ꢀ 2%

01.11.2003

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