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BCX70KRTA PDF预览

BCX70KRTA

更新时间: 2024-10-28 13:02:47
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管光电二极管局域网
页数 文件大小 规格书
2页 66K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon

BCX70KRTA 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.13
最大集电极电流 (IC):0.2 A基于收集器的最大容量:4.5 pF
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
最大关闭时间(toff):800 ns最大开启时间(吨):150 ns
VCEsat-Max:0.55 VBase Number Matches:1

BCX70KRTA 数据手册

 浏览型号BCX70KRTA的Datasheet PDF文件第2页 
SOT23 NPN SILICON PLANAR  
BCX70  
SMALL SIGNAL TRANSISTOR  
ISSUE 2 – FEBRUARY 95  
PARTMARKING DETAIL –  
BCX70G – AG  
BCX70H – AH  
E
BCX70J  
– AJ  
C
BCX70K – AK  
BCX70GR – AW  
BCX70HR – 9P  
BCX70JR – AX  
BCX70KR – P9  
B
COMPLEMENTARY TYPE – BCX71  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCES  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Emitter Voltage  
45  
Collector-Emitter Voltage  
45  
V
Emitter-Base Voltage  
5
200  
V
Continuous Collector Current  
Base Current  
mA  
mA  
mW  
°C  
IB  
50  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
PTOT  
tj:tstg  
330  
-55 to +150  
FOUR TERMINAL NETWORK DATA (I =2mA, V =5V, f=1kHz)  
CE  
c
hFEGroup G  
hFEGroup H  
hFE Group J  
hFEGroup K  
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.  
h11e  
h12e  
h21e  
h22e  
1.6  
2.7  
1.5  
200  
18  
4.5  
2.5  
3.6  
2
6.0  
50  
3.2  
4.5  
2
8.5  
60  
4.5  
7.5  
3
12  
kΩ  
-4  
10  
260  
24  
330  
30  
520  
50  
30  
100  
µS  
SWITCHING CIRCUIT  
-V  
V (+10V)  
R
R
1µsec  
R
+10V  
t < 5nsec  
Z 100kΩ  
Oscilloscope  
t < 5nsec  
Mark/Space ratio < 0.01  
50Ω  
Z =50Ω  
PAGE NO  

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