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BCX56

更新时间: 2024-11-13 12:36:43
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 127K
描述
TRANSISTOR (NPN)

BCX56 数据手册

  
RoHS  
BCX56  
SOT-89  
1. BASE  
BCX56  
TRANSISTOR (NPN)  
FEATURES  
Power dissipation  
PCM:  
Collector current  
ICM:  
2. COLLECTOR  
3. EMITTER  
1
0.5  
1
W (Tamb=25)  
2
A
3
Collector-base voltage  
V(BR)CBO  
:
100  
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=100µA, IE=0  
IC= 10mA , IB=0  
IE=10µA, IC=0  
VCB=30V, IE=0  
VEB=5V, IC=0  
MIN  
100  
80  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
5
V
0.1  
0.1  
µA  
µA  
IEBO  
Emitter cut-off current  
63  
63  
100  
250  
160  
250  
DC current gain  
BCX56  
BCX56-10  
BCX56-16  
hFE(1)  
VCE=2V, IC= 150mA  
hFE(2)  
hFE(3)  
V
CE=2V, IC= 5mA  
40  
25  
VCE=2V, IC= 500mA  
VCE(sat)  
VBE(ON)  
IC=500 mA, IB= 50mA  
IC= 500 mA, VCE=2V  
0.5  
1
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE= 5V, IC= 1mA  
f = 100MHz  
130  
MHz  
Transition frequency  
f T  
WEJ ELECTRONIC CO.,LTD  
BCX56=BH BCX56-10=BK BCX56-16=BL  
DEVICE MARKING  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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High current (max. 1 A). Low voltage (max. 80 V).Collector current IC 1 A