Datasheet > BCX56-10-Q

BCX56-10-Q

更新时间： 2024-11-14 11:12:27

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	234K
描述
80 V, 1 A NPN medium power transistorsProduction

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BCX56-10-Q 数据手册

BCX56-Q series

80 V, 1 A NPN medium power transistors

Rev. 3 — 23 June 2023

Product data sheet

1. General description

NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD)

plastic package

2. Features and benefits

•

High collector current capability I_Cand I_CM

•

Three current gain selections

High power dissipation capability

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Linear voltage regulators

MOSFET drivers

Low-side switches

Battery-driven devices

Power management

MOSFET drivers

Amplifiers

4. Quick reference data

Table 1. Quick reference data

T_amb= 25 °C unless otherwise specified.

Symbol

V_CEO

I_C

Parameter

Conditions

Min

Typ

Max

Unit

collector-emitter voltage

collector current

peak collector current

DC current gain

BCX56-Q

open base

I_CM

single pulse; t_p≤ 1 ms

V_CE= 2 V; I_C= 150 mA

h_FE

[1]

250

160

250

BCX56-10-Q

BCX56-16-Q

100

[1] pulsed; t_p≤ 300 μs; δ ≤ 0.02

12 3 4 5 6 7...12

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