Datasheet > BCX56-10R1/D

BCX56-10R1/D

更新时间： 2024-11-12 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	83K
描述
NPN Silicon Epitaxial Transistor

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BCX56-10R1/D 数据手册

BCX56-10R1

Preferred Device

NPN Silicon

Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in

audio amplifier applications. The device is housed in the SOT-89

package, which is designed for medium power surface mount

applications.

http://onsemi.com

• High Current: 1.0 Amp

• Available in 7 inch/1000 unit Tape and Reel

• Device Marking: BK

MEDIUM POWER

NPN SILICON

HIGH CURRENT

TRANSISTOR

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol

Value

Unit

Vdc

Adc

SURFACE MOUNT

CEO

CBO

EBO

100

COLLECTOR 2

BASE

Total Power Dissipation

@ T = 25°C

Derate above 25°C

(Note 1.)

1.56

0.67

5.0

Watts

mW/°C

Watts

EMITTER

(Note 2.)

mW/°C

Operating and Storage

Temperature Range

T , T

–65 to 150

°C

stg

MARKING DIAGRAM

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance

Junction-to-Ambient

(surface mounted)

°C/W

SOT–89

CASE 1213

STYLE 2

(Note 1.)

(Note 2.)

190

= Year Code

M = Month Code

BK= Device Code

Maximum Temperature for

Soldering Purposes

Time in Solder Bath

260

°C

Sec

1. FR–4 @ 1.0 X 1.0 inch Pad

2. FR–4 @ Minimum Pad

ORDERING INFORMATION

Device

Package

Shipping

BCX56–10R1

SOT–89

1000/Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

June, 2001 – Rev. 0

BCX56–10R1/D

12 3 4

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