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BCX56-16BK PDF预览

BCX56-16BK

更新时间: 2024-01-15 21:58:19
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 89K
描述
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

BCX56-16BK 数据手册

 浏览型号BCX56-16BK的Datasheet PDF文件第2页 
TM  
BCX54  
BCX55  
BCX56  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
NPN SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BCX54,  
BCX55, and BCX56 types are NPN Silicon  
Transistors manufactured by the epitaxial planar  
process, epoxy molded in a surface mount  
package, designed for high current general  
purpose amplifier applications.  
MARKING CODE:  
(SEE TABLE ON FOLLOWING PAGE)  
SOT-89 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL BCX54  
BCX55  
60  
60  
5.0  
1.0  
1.5  
100  
200  
1.3  
BCX56  
100  
80  
UNITS  
V
V
V
A
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Base Current  
Peak Base Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
V
V
V
45  
45  
CBO  
CEO  
EBO  
I
C
I
A
CM  
I
mA  
mA  
W
°C  
°C/W  
B
I
BM  
P
D
T , T  
stg  
-65 to +150  
96  
J
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
100  
10  
UNITS  
nA  
μA  
nA  
V
V
V
V
V
V
V
I
I
I
V
V
V
=30V  
CBO  
CBO  
EBO  
CB  
CB  
EB  
=30V, T =125°C  
A
=5.0V  
100  
BV  
BV  
BV  
BV  
BV  
BV  
I =100μA (BCX54)  
45  
60  
100  
45  
60  
80  
CBO  
CBO  
CBO  
CEO  
CEO  
CEO  
CE(SAT)  
BE(ON)  
FE  
C
I =100μA (BCX55)  
C
I =100μA (BCX56)  
C
I =10mA (BCX54)  
C
I =10mA (BCX55)  
C
I =10mA (BCX56)  
C
V
V
h
h
I =500mA, I =50mA  
0.5  
1.0  
C
B
C
C
C
V
=2.0V, I =500mA  
=2.0V, I =5.0mA  
=2.0V, I =150mA  
=2.0V, I =150mA  
V
CE  
CE  
CE  
CE  
V
V
V
40  
63  
250  
160  
250  
FE  
h
FE  
FE  
FE  
C
(BCX54-10, BCX55-10, BCX56-10)  
63  
h
h
V
=2.0V, I =150mA  
(BCX54-16, BCX55-16, BCX56-16)  
=2.0V, I =500mA  
CE  
C
100  
25  
V
V
CE  
CE  
C
C
f
=5.0V, I =10mA, f=100MHz  
130  
MHz  
T
R4 (30-July 2008)  

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TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | SOT-89