Datasheet > BCX56-10-BK

BCX56-10-BK

更新时间： 2024-11-12 22:35:11

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1页	20K
描述
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

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BCX56-10-BK 数据手册

BCX54

BCX55

BCX56

SOT89 NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 3 – FEBRUARY 1996

✪

PARTMARKING DETAILS:-

BCX54 – BA

BCX55 – BE

BCX56 – BH

BCX54-10 – BC

BCX55-10 – BG

BCX56-10 – BK

BCX54-16 – BD

BCX55-16 – BM

BCX56-16 – BL

COMPLEMENTARY TYPES:-

BCX54 – BCX51

BCX55 – BCX52

BCX56 – BCX53

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

BCX54 BCX55

BCX56

100

UNIT

Collector-Base Voltage

Collector-Em itter Voltage

Em itter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_{am b}=25°C

I_C

P_tot

°C

Operating and Storage Tem perature Range T_j:T_stg

-65 to +150

ELECTRICAL CHARACTERISTICS (at T

am b

= 25°C unless otherw ise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown BCX54 V_(BR)CBO

100

Voltage

BCX55

BCX56

=100µA

Collector-Em itter

Breakdown Voltage

BCX54 V_(BR)CEO

BCX55

BCX56

=10m A*

Em itter-Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)EBO

I_CBO

I_E=10µA

0.1

V_CB=30V

µA

_CB=30V, T_{am b}=150°C

Em itter Cut-Off Current

I_EBO

V_EB=4V

Collector-Em itter Saturation Voltage V_CE(sat)

0.5

1.0

I_C=500m A, I_B=50m A*

I_C=500m A, V_CE=2V*

I_C=5m A, V_CE=2V*

Base-Em itter Turn-On Voltage

V_BE(on)

h_FE

Static Forward Current Transfer

Ratio

250

_C=150m A, V_CE=2V*

_C=500m A, V_CE=2V*

_C=150m A, V_CE=2V*

I_C=150m A, V_CE=2V*

–10

–16

160

250

100

Transition Frequency

Output Capacitance

f_T

150

MHz I_C=50m A, V_CE=10V,

f=100MHz

C_obo

V_CB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

3 - 35

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