Datasheet > BCX56-10

BCX56-10

更新时间： 2024-11-18 06:41:47

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
3页	180K
描述
NPN Plastic-Encapsulate Transistor

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中文翻译

获取价格

数据手册

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BCX56-10 数据手册

BCX56

NPN Plastic-Encapsulate Transistor

P b

Lead(Pb)-Free

1. BASE

2. COLLECTOR

3. EMITTER

SOT-89

MAXIMUM RATINGS ( T =25°C unless otherwise noted)

Rating

Symbol

Value

100

Unit

Collector-Base Voltage

CBO

Collector-Emitter Voltage

Emitter-Base Voltage

CEO

EBO

5.0

1.0

Collector Current Continuous

˚C

500

Total Device Dissipation T =25°C

+150

Junction Temperature Range

Storage Temperature Range

-55 to +150

˚C

Tstg

Device Marking

BCX56=BH , BCX56-10=BK , BCX56-16=BL

OFF CHARACTERISTICS

Characteristics

Symbol

Min

Max

100

Unit

Collector-Base Breakdown Voltage, I = 100µA, I = 0

V(BR)

CBO

CEO

EBO

Collector-Emitter Breakdown Voltage, I = 10mA, I = 0

Emitter-Base Breakdown Voltage, I = 10µA, I = 0

5.0

Collector Cut-oﬀ Current, V = 30V, I = 0

µA

0.1

CBO

Emitter Cut-oﬀ Current, V = 5.0V, I = 0

EBO

WEITRON

http://www.weitron.com.tw

1/3

15-Feb-06

12 3

中文翻译

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