是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 15 weeks |
风险等级: | 5.61 | 其他特性: | HIGH RELIABILITY |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
基于收集器的最大容量: | 25 pF | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 25 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 最低工作温度: | -65 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
功耗环境最大值: | 1 W | 最大功率耗散 (Abs): | 1 W |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCX55-TP | MCC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP | |
BCX55TR | CENTRAL |
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Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
BCX55TR13 | CENTRAL |
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Transistor | |
BCX55TRL | YAGEO |
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Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon | |
BCX55TRL13 | NXP |
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TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
BCX55TRL13 | YAGEO |
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Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon | |
BCX55U | SWST |
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小信号晶体管 | |
BCX55U-AH | SWST |
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小信号晶体管 | |
BCX56 | ZETEX |
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SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |
BCX56 | SECOS |
获取价格 |
Plastic-Encapsulate Transistors |