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BCX56 PDF预览

BCX56

更新时间: 2024-09-25 08:50:55
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管
页数 文件大小 规格书
2页 194K
描述
NPN Plastic-Encapsulate Transistors

BCX56 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.07外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):63
JESD-30 代码:R-PSSO-F3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHzBase Number Matches:1

BCX56 数据手册

 浏览型号BCX56的Datasheet PDF文件第2页 
M C C  
BCX56  
BCX56-10  
BCX56-16  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
NPN  
Plastic-Encapsulate  
ꢀꢁ Power Dissipation: PCM=0.5W (Tamb=25R)  
ꢀꢁ Collector Current: ICM=1.0A  
ꢀꢁ Collector-Base Voltage: V(BR)CBO=100V  
ꢀꢁ Marking : BCX56=BH, BCX56-10=BK, BCX56-16=BL  
Transistors  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Maximum Ratings  
SOT-89  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
PC  
TJ  
TSTG  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current DC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
Value  
80  
100  
5.0  
1.0  
0.5  
150  
-55 to +150  
Unit  
V
V
V
A
W
OC  
OC  
A
K
B
E
Electrical Characteristics @ 25C Unless Otherwise Specified  
Typ  
C
Symbol  
Parameter  
Min  
Max Units  
OFF CHARACTERISTICS  
D
VCBO  
VCEO  
VEBO  
ICBO  
Collector-Base Voltage  
(IC=100uAdc, IE=0)  
Collector-Emitter Voltage  
(IC=10mAdc, IB=0)  
Emitter-Base Voltage  
(IE=10uAdc, IC=0)  
Collector Cutoff Current  
(VCB=30Vdc, IE=0)  
100  
80  
---  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
G
H
J
F
5.0  
---  
---  
Vdc  
0.1  
0.1  
uAdc  
uAdc  
IEBO  
Emitter Cutoff Current  
(VEB=5.0Vdc, IC=0)  
1. BASE  
1
2
3
---  
2. COLLECTOR  
hFE(1)  
DC Current Gain  
(VCE=2.0Vdc, IC=150mAdc)  
3. EMITTER  
BCX56  
63  
63  
100  
---  
---  
---  
250  
160  
250  
---  
BCX56-10  
BCX56-16  
hFE(2)  
hFE(3)  
VCE(sat)  
VBE(sat)  
fT  
DC Current Gain  
(VCE=2.0Vdc, IC=5.0mAdc)  
DC Current Gain  
(VCE=2.0Vdc, IC=500mAdc)  
Collector-Emitter Saturation Voltage  
(IC=500mAdc,IB=50mAdc)  
Base-Emitter Voltage  
(IC=500mAdc, VCE=2.0Vdc)  
Transition Frequency  
40  
25  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
ꢀꢁꢂꢃꢄꢅꢁꢄꢅꢆ  
ꢈꢀꢇꢆ  
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢇꢆ  
ꢁꢋꢌꢄꢅꢆ  
ꢇꢀꢁꢆ  
ꢍꢎꢏꢐꢆ  
ꢇꢉꢊꢆ  
ꢇꢀꢁꢆ  
ꢒꢍꢐꢓꢆ  
1.55  
ꢇꢉꢊꢆ  
ꢒꢍꢔꢕꢆ  
ꢇꢇꢇꢇꢇ  
ꢉꢆ  
ꢍꢎꢑꢎꢆ  
.061  
ꢇꢇꢇꢇꢇ  
REF.  
0.5  
1.0  
Vdc  
Vdc  
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
ꢙꢆ  
ꢝꢆ  
ꢃꢆ  
ꢞꢆ  
ꢍꢎꢗꢒꢆ  
ꢍꢕꢐꢎꢆ  
ꢍꢕꢓꢘꢆ  
ꢍꢎꢎꢑꢆ  
ꢍꢕꢎꢐꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢗꢗꢆ  
ꢍꢎꢔꢗꢆ  
ꢍꢕꢐꢓꢆ  
ꢍꢎꢕꢕꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢍꢕꢎꢓꢆ  
ꢍꢕꢘꢎꢆ  
ꢍꢕꢎꢔꢆ  
ꢍꢕꢔꢐꢆ  
ꢐꢍꢓꢎꢆ  
ꢕꢍꢑꢕꢆ  
ꢘꢍꢐꢒꢆ  
ꢐꢍꢕꢕꢆ  
ꢕꢍꢐꢐꢆ  
ꢕꢍꢐꢑꢆ  
ꢕꢍꢐꢑꢆ  
ꢎꢍꢒꢕꢆ  
ꢒꢍ25  
ꢎꢍꢕꢕꢆ  
ꢘꢍꢗꢒꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢌꢛꢜꢆ  
ꢕꢍꢒꢑꢆ  
ꢕꢍꢗꢐꢆ  
ꢕꢍꢒꢎꢆ  
ꢎꢍꢔꢕꢆ  
(VCE=100Vdc, IC=50mAdc,  
f=100MHz)  
130  
---  
---  
MHz  
 ꢆ  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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