是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SC-62, SOT-89, 3 PIN | Reach Compliance Code: | compliant |
风险等级: | 5.62 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 63 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 1.1 W |
参考标准: | AEC-Q101; IEC-60134 | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | FLAT |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 155 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCX55-T | NXP |
获取价格 |
TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243, SOT-89, 3 PIN, BIP Gen |
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BCX55T/R | ETC |
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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | SOT-89 |
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BCX55-T1 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL |
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BCX55-T1BF | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL |
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BCX55-T1BG | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL |
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BCX55-T2 | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL |
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BCX55-T2BF | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL |
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BCX55-T2BG | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL |
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BCX55TA | DIODES |
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NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 |
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BCX55TA | ZETEX |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon |
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