生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code: | unknown | 风险等级: | 5.62 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 功耗环境最大值: | 2 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 160 MHz | VCEsat-Max: | 0.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCX55-T2BG | NEC |
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Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
BCX55TA | DIODES |
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NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 | |
BCX55TA | ZETEX |
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Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon | |
BCX55TC | DIODES |
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Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, | |
BCX55-TP | MCC |
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Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP | |
BCX55TR | CENTRAL |
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Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
BCX55TR13 | CENTRAL |
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Transistor | |
BCX55TRL | YAGEO |
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Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon | |
BCX55TRL13 | NXP |
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TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
BCX55TRL13 | YAGEO |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon |