是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | HTS代码: | 8541.21.00.95 |
风险等级: | 5.12 | 其他特性: | LOW NOISE |
基于收集器的最大容量: | 4.5 pF | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN (315) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
VCEsat-Max: | 0.3 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCW89TRL | NXP |
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TRANSISTOR 100 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCW89TRL13 | YAGEO |
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Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon | |
BCW89TRL13 | NXP |
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TRANSISTOR 100 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCW89TRLEADFREE | CENTRAL |
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Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, | |
BCW90 | MICRO-ELECTRONICS |
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Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
BCW90K | ETC |
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TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-92VAR | |
BCW91 | ETC |
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Medium Power Amplifiers and Switches | |
BCW91K | ETC |
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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 800MA I(C) | TO-92VAR | |
BCW92 | ETC |
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Medium Power Amplifiers and Switches | |
BCW92K | ETC |
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TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 800MA I(C) | TO-92VAR |