生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.67 |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCW89LEADFREE | CENTRAL |
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Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO | |
BCW89-Q | NEXPERIA |
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60 V, 100 mA PNP general purpose transistorProduction | |
BCW89R | STMICROELECTRONICS |
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TRANSISTOR,BJT,PNP,60V V(BR)CEO,100MA I(C),TO-236 | |
BCW89RTA | DIODES |
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Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon | |
BCW89R-TAPE-13 | NXP |
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TRANSISTOR 100 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCW89R-TAPE-7 | NXP |
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TRANSISTOR 100 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCW89RTC | DIODES |
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Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon | |
BCW89S62Z | TI |
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PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | |
BCW89-T | NXP |
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TRANSISTOR 100 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SOT-23, 3 PIN, BIP General Purp | |
BCW89T/R | NXP |
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TRANSISTOR 100 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |