Datasheet > BCW89-Q

BCW89-Q

更新时间： 2024-11-26 17:01:59

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
9页	199K
描述
60 V, 100 mA PNP general purpose transistorProduction

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BCW89-Q 数据手册

BCW89-Q

60 V, 100 mA PNP general purpose transistor

8 January 2024

Product data sheet

1. General description

PNP switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•

Low current (max. 100 mA)

•

Low voltage (max. 60 V)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General purpose switching and amplification

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base; I_C= -2 mA

-60

I_C

collector current

DC current gain

-100

h_FE

V_CE= -5 V; I_C= -10 µA; T_j= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

emitter

collector

sym132

SOT23

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

BCW89-Q

SOT23

plastic, surface-mounted package; 3 terminals; 1.9 mm

pitch; 2.9 mm x 1.3 mm x 1 mm body

SOT23

12 3 4 5 6 7...9

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