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BCW61CLT1 PDF预览

BCW61CLT1

更新时间: 2024-11-05 20:29:31
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管晶体管
页数 文件大小 规格书
8页 276K
描述
100mA, 32V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, CASE 318-08, 3 PIN

BCW61CLT1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.01
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:32 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICON最大关闭时间(toff):800 ns
最大开启时间(吨):150 nsBase Number Matches:1

BCW61CLT1 数据手册

 浏览型号BCW61CLT1的Datasheet PDF文件第2页浏览型号BCW61CLT1的Datasheet PDF文件第3页浏览型号BCW61CLT1的Datasheet PDF文件第4页浏览型号BCW61CLT1的Datasheet PDF文件第5页浏览型号BCW61CLT1的Datasheet PDF文件第6页浏览型号BCW61CLT1的Datasheet PDF文件第7页 
Order this document  
by BCW61BLT1/D  
SEMICONDUCTOR TECHNICAL DATA  
PNP Silicon  
COLLECTOR  
3
1
BASE  
3
2
EMITTER  
1
MAXIMUM RATINGS  
2
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
Symbol  
Value  
Unit  
Vdc  
V
CEO  
–32  
–32  
CASE 31808, STYLE 6  
SOT23 (TO236AB)  
V
Vdc  
CBO  
EBO  
EmitterBase Voltage  
V
–5.0  
–100  
Vdc  
Collector Current — Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
C
mAdc  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
P
225  
mW  
D
T
= 25°C  
A
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance Junction to Ambient  
Total Device Dissipation  
R
JA  
D
P
(2)  
Alumina Substrate,  
Derate above 25°C  
T = 25°C  
A
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
JA  
T , T  
J stg  
55 to +150  
BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
–32  
Vdc  
Vdc  
(BR)CEO  
(I = –2.0 mAdc, I = 0)  
C
B
EmitterBase Breakdown Voltage  
(I = –1.0 Adc, I = 0)  
V
–5.0  
(BR)EBO  
E
C
Collector Cutoff Current  
I
CES  
(V  
CE  
(V  
CE  
= –32 Vdc)  
= –32 Vdc, T = 150°C)  
–20  
–20  
nAdc  
µAdc  
A
1. FR5 = 1.0  
2. Alumina = 0.4  
0.75 0.062 in.  
0.3 0.024 in. 99.5% alumina.  
Thermal Clad is a trademark of the Bergquist Company  
Motorola, Inc. 1996

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