生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.01 |
Is Samacsys: | N | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.2 A | 集电极-发射极最大电压: | 32 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 180 MHz |
最大关闭时间(toff): | 800 ns | 最大开启时间(吨): | 150 ns |
VCEsat-Max: | 0.55 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCW61CTC | DIODES |
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Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon | |
BCW61CTF | SAMSUNG |
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Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, | |
BCW61CTI | SAMSUNG |
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Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, | |
BCW61CTR | SAMSUNG |
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Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, | |
BCW61CTR13 | CENTRAL |
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Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, | |
BCW61CTR13LEADFREE | CENTRAL |
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Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, | |
BCW61CTRL | NXP |
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TRANSISTOR 200 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BCW61CTRL13 | YAGEO |
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Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon | |
BCW61CTRLEADFREE | CENTRAL |
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Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, | |
BCW61D | DIOTEC |
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Surface mount Si-Epitaxial PlanarTransistors |