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BCW61CRTC PDF预览

BCW61CRTC

更新时间: 2024-11-05 13:05:55
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管局域网
页数 文件大小 规格书
2页 43K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon

BCW61CRTC 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.12
Is Samacsys:N最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):180 MHz最大关闭时间(toff):800 ns
最大开启时间(吨):150 nsBase Number Matches:1

BCW61CRTC 数据手册

 浏览型号BCW61CRTC的Datasheet PDF文件第2页 
SOT23 PNP SILICON PLANAR  
SMALL SIGNAL TRANSISTORS  
ISSUE 2 – FEBRUARY 95  
BCW61  
PARTMARKING DETAIL –  
BCW61A  
BCW61B  
BCW61C  
BCW61D  
– BA  
– BB  
– BC  
– BD  
BCW61AR – CA  
BCW61BR – CB  
BCW61CR – CC  
BCW61DR – CD  
E
C
B
COMPLEMENTARY TYPE – BCW60  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
-32  
-32  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
-5  
V
Continuous Collector Current  
Base Current  
-200  
mA  
mA  
mW  
°C  
IB  
-50  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
PTOT  
Tj:Tstg  
330  
-55 to +150  
FOUR TERMINAL NETWORK DATA (I =2mA, V =5V, f=1kHz)  
CE  
c
hFEGroup A  
hFEGroup B  
hFE GroupC  
hFEGroup D  
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.  
h11e  
h12e  
h21e  
h22e  
1.6  
2.7  
1.5  
200  
18  
4.5  
30  
2.5  
3.6  
2
6.0  
50  
3.2  
4.5  
2
8.5  
4.5  
7.5  
3
12  
kΩ  
10-4  
260  
24  
330  
30  
520  
50  
60  
100  
µS  
+VBB  
VCC(-10V)  
R
R
1µsec  
R
-10V  
tr < 5nsec  
tr < 5nsec  
Mark/Space ratio < 0.01  
Zin 100kΩ  
BAY 63  
50Ω  
Oscilloscope  
Zs=50Ω  
S
W
PAGE NO  
ITCHING CIRCUIT  

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