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BCR192L3E6327 PDF预览

BCR192L3E6327

更新时间: 2024-11-25 14:49:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体管
页数 文件大小 规格书
16页 384K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon

BCR192L3E6327 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):70元件数量:1
极性/信道类型:PNP最大功率耗散 (Abs):0.25 W
子类别:BIP General Purpose Small Signal表面贴装:YES
晶体管元件材料:SILICONBase Number Matches:1

BCR192L3E6327 数据手册

 浏览型号BCR192L3E6327的Datasheet PDF文件第2页浏览型号BCR192L3E6327的Datasheet PDF文件第3页浏览型号BCR192L3E6327的Datasheet PDF文件第4页浏览型号BCR192L3E6327的Datasheet PDF文件第5页浏览型号BCR192L3E6327的Datasheet PDF文件第6页浏览型号BCR192L3E6327的Datasheet PDF文件第7页 
BCR192...  
PNP Silicon Digital Transistor  
Switching circuit, inverter, interface circuit,  
driver circuit  
Built in bias resistor (R = 22k, R = 47k)  
1
2
For 6-PIN packages: two (galvanic) internal  
isolated transistors with good matching  
in one package  
BCR192/F/L3  
BCR192T/W  
BCR192U  
C
C1  
6
B2  
5
E2  
4
3
R2  
R1  
R1  
TR2  
TR1  
R1  
R2  
R2  
1
2
3
1
2
E1  
B1  
C2  
B
E
EHA07173  
EHA07183  
Type  
BCR192  
Marking  
WPs  
WPs  
WP  
WPs  
WPs  
WPs  
Pin Configuration  
Package  
1=B  
1=B  
1=B  
1=B  
2=E 3=C  
2=E 3=C  
2=E 3=C  
2=E 3=C  
-
-
-
-
-
-
-
-
-
-
-
-
SOT23  
TSFP-3  
TSLP-3-4  
SC75  
BCR192F  
BCR192L3  
BCR192T  
BCR192U  
BCR192W  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74  
1=B 2=E 3=C SOT323  
-
-
-
Aug-29-2003  
1

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