是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.46 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 120 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCR119F | INFINEON |
获取价格 |
NPN silicon Digital Transistor | |
BCR119L3 | INFINEON |
获取价格 |
NPN silicon Digital Transistor | |
BCR119S | INFINEON |
获取价格 |
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driv | |
BCR119S-E6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | |
BCR119S-E6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon | |
BCR119SH6327XTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, | |
BCR119SQ62702C2415 | INFINEON |
获取价格 |
TRANSISTOR DIGITAL SOT363 | |
BCR119T | INFINEON |
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NPN silicon Digital Transistor | |
BCR119W | INFINEON |
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NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver cir | |
BCR12 | MITSUBISHI |
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MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |