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BCP56-10,115 PDF预览

BCP56-10,115

更新时间: 2024-01-04 12:03:46
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
22页 1121K
描述
80 V, 1 A NPN medium power transistor SC-73 4-Pin

BCP56-10,115 技术参数

生命周期:Active零件包装代码:SC-73
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantHTS代码:8541.29.00.75
Factory Lead Time:4 weeks风险等级:0.64
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):63JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN参考标准:AEC-Q101; IEC-60134
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):180 MHz

BCP56-10,115 数据手册

 浏览型号BCP56-10,115的Datasheet PDF文件第2页浏览型号BCP56-10,115的Datasheet PDF文件第3页浏览型号BCP56-10,115的Datasheet PDF文件第4页浏览型号BCP56-10,115的Datasheet PDF文件第5页浏览型号BCP56-10,115的Datasheet PDF文件第6页浏览型号BCP56-10,115的Datasheet PDF文件第7页 
BCP56; BCX56; BC56PA  
80 V, 1 A NPN medium power transistors  
Rev. 9 — 25 October 2011  
Product data sheet  
1. Product profile  
1.1 General description  
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.  
Table 1. Product overview  
Type number[1]  
Package  
NXP  
PNP complement  
JEITA  
SC-73  
SC-62  
-
JEDEC  
BCP56  
BCX56  
BC56PA  
SOT223  
SOT89  
SOT1061  
-
BCP53  
BCX53  
BC53PA  
TO-243  
-
[1] Valid for all available selection groups.  
1.2 Features and benefits  
High current  
Three current gain selections  
High power dissipation capability  
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  
Leadless very small SMD plastic package with medium power capability (SOT1061)  
AEC-Q101 qualified  
1.3 Applications  
Linear voltage regulators  
Power management  
MOSFET drivers  
Amplifiers  
Low-side switches  
Battery-driven devices  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
-
Typ  
Max  
80  
Unit  
V
VCEO  
IC  
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
-
1
A
ICM  
hFE  
peak collector current  
DC current gain  
single pulse; tp 1 ms  
-
2
A
[1]  
[1]  
[1]  
VCE = 2 V; IC = 150 mA  
VCE = 2 V; IC = 150 mA  
VCE = 2 V; IC = 150 mA  
63  
63  
100  
250  
160  
250  
hFE selection -10  
hFE selection -16  
[1] Pulse test: tp 300 s; = 0.02.  
 
 
 
 
 
 
 

BCP56-10,115 替代型号

型号 品牌 替代类型 描述 数据表
BCP56-10 NXP

完全替代

NPN medium power transistors

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