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BCP53H PDF预览

BCP53H

更新时间: 2024-02-06 06:07:44
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
16页 1272K
描述
80 V, 1 A PNP medium power transistors

BCP53H 数据手册

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BCP53H series  
SC-73  
80 V, 1 A PNP medium power transistors  
Rev. 1 — 21 July 2017  
Product data sheet  
1. Product profile  
1.1 General description  
PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted  
Device (SMD) plastic package.  
Table 1.  
Product overview  
Type number  
Package  
Nexperia  
SOT223  
NPN complement  
JEITA  
JEDEC  
BCP53H  
SC-73  
-
BCP56H  
BCP53-10H  
BCP53-16H  
BCP56-10H  
BCP56-16H  
1.2 Features and benefits  
High collector current capability IC and ICM  
Three current gain selections  
High power dissipation capability  
High-temperature applications up to 175 C  
AEC-Q101 qualified  
1.3 Applications  
Linear voltage regulators  
MOSFET drivers  
High-side switches  
Power management  
Amplifiers  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Tamb = 25 C unless otherwise specified.  
Symbol Parameter Conditions  
VCEO collector-emitter voltage open base  
IC  
Min  
Typ  
Max Unit  
-
-
-
-
-
-
80  
1  
V
A
A
collector current  
ICM  
peak collector current  
single pulse; tp 1 ms  
2  

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TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-223