Datasheet > BCP53H-Q

BCP53H-Q

更新时间： 2023-09-03 20:32:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	269K
描述
80 V, 1 A PNP medium power transistorsProduction

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BCP53H-Q 数据手册

BCP53H-Q series

80 V, 1 A PNP medium power transistors

Rev. 2 — 29 March 2023

Product data sheet

1. General description

PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic

package.

2. Features and benefits

•

High collector current capability I_Cand I_CM

•

Three current gain selections

High power dissipation capability

High-temperature applications up to 175 °C

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Linear voltage regulators

MOSFET drivers

High-side switches

Power management

Amplifiers

4. Quick reference data

Table 1. Quick reference data

T_amb= 25 °C unless otherwise specified.

Symbol

V_CEO

I_C

Parameter

Conditions

Min

Typ

Max

-80

-1

Unit

collector-emitter voltage

collector current

peak collector current

DC current gain

BCP53H-Q

open base

I_CM

single pulse; t_p≤ 1 ms

V_CE= -2 V; I_C= 150 mA

-2

h_FE

[1]

250

160

250

BCP53-10H-Q

BCP53-16H-Q

100

[1] pulsed; t_p≤ 300 μs; δ ≤ 0.02

12 3 4 5 6 7...14

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