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BCP3669-C PDF预览

BCP3669-C

更新时间: 2024-11-12 01:12:51
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SECOS /
页数 文件大小 规格书
2页 222K
描述
NPN Plastic-Encapsulate Transistor

BCP3669-C 数据手册

 浏览型号BCP3669-C的Datasheet PDF文件第2页 
BCP3669  
2A, 80V  
NPN Plastic-Encapsulate Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURES  
SOT-89  
Small Flat Package  
4
Large Current Capacity  
High DC Current Gain  
1
2
3
A
E
C
APPLICATION  
LF Amplifiers, Various Drivers, Muting Circuit  
B
D
MARKING  
3669  
F
G
H
K
J
L
ꢁꢁꢁꢁ  
Date Code  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
4.60  
4.25  
1.60  
2.60  
Min.  
Max.  
PACKAGE INFORMATION  
A
B
C
D
4.40  
3.94  
1.40  
2.25  
G
H
J
0.40  
0.58  
1.50 TYP  
3.00 TYP  
Package  
MPQ  
Leader Size  
K
0.32  
0.52  
0.44  
SOT-89  
1K  
7 inch  
E
F
1.55 TYP.  
L
0.35  
0.89  
1.20  
Collector  
24  
ORDER INFORMATION  
Part Number  
Type  
Lead (Pb)-free  
Lead (Pb)-free and Halogen-free  
BCP3669  
1
Base  
BCP3669-C  
3
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
Collector-Base Voltage  
80  
Collector-Emitter Voltage  
Emitter-Base Voltage  
80  
V
5
V
Continuous Collector Current  
Total Power Dissipation  
Junction, Storage Temperature  
2
A
PD  
1
W
°C  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min.  
Typ.  
Max.  
Unit  
Test conditions  
IC=100µA, IE=0  
IC=100µA, IB=0  
IE=100µA, IC=0  
VCB=80V, IE=0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
80  
-
-
V
V
80  
-
-
5
-
-
V
-
-
-
1
µA  
µA  
Emitter Cut-off Current  
IEBO  
-
1
VBE=5V, IC=0  
Collector-Emitter Saturation Voltage 1  
Base-Emitter Saturation Voltage 1  
VCE(sat)  
VBE(sat)  
-
-
0.5  
V
IC=1A, IB=50mA  
-
-
1.2  
180  
-
240  
VCE=2V, IC=500mA  
VCE=2V, IC=1.5A  
VCE=2V, IC=500mA  
VCB=10V, f=1MHz  
DC Current Gain 1  
hFE  
40  
-
-
-
-
-
-
-
-
Transition Frequency  
Collector Output Capacitance  
Turn on  
fT  
Cob  
TON  
TSTG  
Tf  
100  
30  
0.2  
1
MHz  
pF  
-
-
V
CC=30V, RL=30, IC=1A  
Storage Time  
-
µS  
IB1= -IB1=50mA  
Duty Cycle1%  
Fall Time  
Note:  
-
0.2  
1. Pulse Test: Pulse Width380µs, Duty Cycle2%.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
08-Dec-2017 Rev. B  
Page 1 of 2  

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