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BCP49E6327HTSA1 PDF预览

BCP49E6327HTSA1

更新时间: 2024-11-11 21:19:03
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管晶体管
页数 文件大小 规格书
7页 73K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon,

BCP49E6327HTSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.7
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:60 V配置:DARLINGTON
最小直流电流增益 (hFE):2000JESD-30 代码:R-PDSO-G4
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

BCP49E6327HTSA1 数据手册

 浏览型号BCP49E6327HTSA1的Datasheet PDF文件第2页浏览型号BCP49E6327HTSA1的Datasheet PDF文件第3页浏览型号BCP49E6327HTSA1的Datasheet PDF文件第4页浏览型号BCP49E6327HTSA1的Datasheet PDF文件第5页浏览型号BCP49E6327HTSA1的Datasheet PDF文件第6页浏览型号BCP49E6327HTSA1的Datasheet PDF文件第7页 
BCP49  
NPN Silicon Darlington Transistors  
For general AF applications  
High collector current  
High current gain  
4
3
2
1
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
C(2,4)  
B(1)  
E(3)  
EHA00009  
Type  
Marking  
Pin Configuration  
Package  
BCP49  
BCP 49  
1 = B  
2 = C  
3 = E  
4 = C  
SOT223  
Maximum Ratings  
Parameter  
Symbol  
Values  
60  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
DC collector current  
Peak collector current  
Base current  
V
V
V
V
CEO  
CBO  
EBO  
80  
10  
500  
800  
100  
200  
1.5  
mA  
mA  
I
C
I
CM  
I
B
Peak base current  
I
BM  
W
Total power dissipation, T = 124 °C  
P
tot  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
2)  
Junction - soldering point  
R
17  
K/W  
thJS  
1
Pb-containing package may be available upon special request  
2
For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2007-04-27  
1

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