Datasheet > BCP49E6419

BCP49E6419

更新时间： 2024-09-26 14:47:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
6页	67K
描述
Small Signal Bipolar Transistor,

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中文翻译

获取价格

技术参数
数据手册

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BCP49E6419 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.89	湿度敏感等级：	1
Base Number Matches：	1

BCP49E6419 数据手册

BCP49

PNP Silicon Darlington Transistor

• For general AF applications

• High collector current

• High current gain

C(2,4)

B(1)

E(3)

EHA00009

Type

Marking

Pin Configuration

Package

SOT223

BCP49

1=B 2=C 3=E 4=C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CBO

EBO

500

800

100

200

1.5

Peak collector current

Base current

Peak base current

Total power dissipation-

tot

≤ 124 °C

150

°C

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

≤ 17

thJS

For calculation of R

please refer to Application Note Thermal Resistance

thJA

2005-12-29

12 3 4 5 6

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